Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1996-10-25
1998-09-08
Jackson, Jerome
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25033905, 25037014, 2503384, 250368, 257432, 257435, 257440, 257434, H01L 31101, H01L 310232, G01J 520, G01T 120
Patent
active
058048278
ABSTRACT:
An infrared ray detection device of this invention includes (i) a silicon substrate, (ii) a plurality of light-receiving portions which are disposed at predetermined intervals on one surface of the silicon substrate, and receive infrared rays, (iii) a plurality of reading portions which are disposed on the one surface of the silicon substrate at positions adjacent to the plurality of light-receiving portions, and read outputs from the plurality of light-receiving portions, and (iv) an impurity-doped silicon layer which are disposed in contact with the other surface of the silicon substrate and contains a donor or acceptor impurity at a concentration high enough to absorb infrared rays passing through the silicon substrate. Also, a solid-state imaging apparatus of this invention includes (1) a light detection device having detection sensitivity to light in a first wavelength region and light in a second wavelength region shorter than the first wavelength region, and (2) an adjustment mechanism which is disposed in front of the light detection device, consists of a member that transmits the light in the first wavelength region and shields the light in the second wavelength region, and adjusts the intensity of the light in the second wavelength region incident on the light detection device.
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Chen et al., "Ultraviolet, Visible, and Infrared Response of PtSi Schottky-Barrier Detectors Operated in the Front-Illuminated Mode", IEEE Transactions on Electron Devices, vol. 38, No. 5, pp. 1094-1103, May 1991.
Akagawa Keiichi
Komai Atsushi
Jackson Jerome
Nikon Corporation
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