Infrared ray detection device

Details Infrared ray detection device Infrared ray detection device

1986-04-14

1989-05-16

James, Andrew J.

357 4, 357 16, 357 24, H01L 29161, H01L 3110, H01L 2715

Patent

active

048314285

ABSTRACT:
An infrared ray detection device comprises a Si crystal substrate, a Ge.sub.x Si.sub.1-x (0<x.ltoreq.1) mixed crystal layer formed on the Si crystal substrate, and a Si crystal layer formed on the Ge.sub.x Si.sub.1-x (0<x.ltoreq.1) mixed crystal layer. An electric charge is stored beforehand in a potential well formed in the Ge.sub.x Si.sub.1-x (0<x.ltoreq.1) mixed crystal layer, and it acts as a signal carrier when it is irradiated by incident infrared rays to be detected. The component elements of the infrared ray detection device can be formed to have a high quality crystal structure, and the infrared ray detection device can detect incident infrared rays having an optional cutoff wavelength longer than 5.2 .mu.m with high sensitivity.

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Sze, Physics of Semiconductors, 2nd ed., J. Wiley & Sons, p. 829.

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