Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-07-11
1999-04-20
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257458, 257459, 257462, H01L 2906
Patent
active
058959300
ABSTRACT:
This invention provides infrared sensing photodetector and a method therefor which provides a structure for effectively absorbing a light incident in a normal direction on a substrate, and a method compatible with existing processes for making integrated circuitry. An infrared sensing photodetector includes a compound semiconductor substrate of a first conductivity type, superlattice areas having implanted impurity ions of a second conductivity type opposite to the compound semiconductor substrate, each being spaced a predetermined distance each other in a selected region of the semiconductor substrate, a first collector area and a first emitter area which are formed in both end portions positioned perpendicular relative to the doped superlattice areas, a first collector electrode and a first emitter electrode formed on the first collector area and the first emitter area, respectively, a second collector area and a second emitter area which are spaced a predetermined distance in a horizontal direction on the doped superlattice area, and a second collector electrode and a second emitter electrode formed on the second collector area and the second emitter area, respectively.
REFERENCES:
patent: 5272356 (1993-12-01), Wen et al.
patent: 5477060 (1995-12-01), Choi
patent: 5506419 (1996-04-01), Levine et al.
G.H. Dohler et al., "Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice", Physical Review Letters, vol. 47, No. 12, Sep. 21, 1981, pp. 864-867.
C.J. Chang-Hasnain et al., "Tunable Electroabsorption and Electroluminescence in GaAs doping Superlattices", SPIE vol. 792 Quantum Well and Superlattice Physics 1987, pp. 45-49, 1987.
B.F. Levine et al., "Broadband 8-12 .mu.m high-sensitivity GaAs quantum well infrared photodetector", Appl. Phys. Lett. 54, Jun. 26, 1989, pp. 2704-2706.
Oh Eung-Gie
Park Chul-Soon
Pyun Kwang-Eui
Yang Jeon-Wook
Electronics and Telecommunications Research Institute
Tran Minh Loan
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