Infrared photodetector using delta-doped semiconductors

Details Infrared photodetector using delta-doped semiconductors Infrared photodetector using delta-doped semiconductors

1995-08-22

1998-05-26

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257184, 257439, H01L 3111

Patent

active

057570256

ABSTRACT:
An infrared photodetector using .delta.-doped semiconductors capable of reducing the requirement to form a quantum well structure of high quality, reducing the need of a cooling device due to the operation at the room temperature, and controlling the wavelength of infrared ray detected by controlling the .delta.-doped concentration. The infrared photodetector includes a semiconductor substrate, an active layer formed over the semiconductor substrate, .delta.-doped layers formed in the active layer, the .delta.-doped layer having a doping concentration controlled for controlling a wavelength of infrared ray detected, a current injection layer formed over the active layer, a cap layer formed over the current injection layer, and an electrode formed on the cap layer.

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