Infrared optical devices of layered structure

Details Infrared optical devices of layered structure Infrared optical devices of layered structure

1978-06-09

1980-05-27

Edlow, Martin H.

357 16, 357 4, 357 3, H01L 2714

Patent

active

042053315

ABSTRACT:
An optical device is disclosed which includes first and second superlattice emiconductor regions. The first superlattice semiconductor region includes a plurality of alternating barrier and light absorbing layers which absorbs light of a first light frequency. The second superlattice region also includes a plurality of alternating barrier and light absorbing layers. However, the light absorbing layers of the second superlattice semiconductor region absorbs light of a different frequency.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3626328 (1971-12-01), Esaki
patent: 4088515 (1975-04-01), Blakeslee
patent: 4103312 (1978-07-01), Esaki
patent: 4137542 (1979-01-01), Esaki

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