Infrared matrix using transfer gates

Details Infrared matrix using transfer gates Infrared matrix using transfer gates

1980-04-18

1984-01-31

Orsino, Jr., Joseph A.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 24, 358213, H04N 533, H04N 315

Patent

active

044293305

ABSTRACT:
An infrared random access imager system is disclosed which includes a scanning mechanism, a random access imager detector matrix, and a video signal processor. The scanning mechanism scans the infrared energy emanating from a scene in the field-of-view. The random access imager detector matrix stores charges as charge packets representative of the infrared energy impinging thereon and the video signal processor processes the charge packets into video signals. Each random access imager detector matrix element comprises a modified charge injection device, which has two electrodes per unit cell, and horizontal and vertical metal-lead address lines, to which is added a third electrode. The third electrode is a transfer gate which transfers the charge of the detector element into a read line and keeps the charge from one detector from spilling into the detector well of an adjoining unit cell. Thus, charge carriers are created by photoabsorption and collected in the detector well (storage well). Upon activation of a charge transfer electrode the charge passes over the dc transfer gate (word line) and down a read line (bit line) to an output charge collector means for processing by the signal processor.

REFERENCES:
patent: 3626193 (1971-12-01), Ishihara
patent: 3995302 (1976-11-01), Amelio
patent: 4072863 (1978-02-01), Roundy
patent: 4084190 (1978-04-01), Stein
patent: 4134031 (1979-01-01), Weimer
patent: 4142207 (1979-02-01), McCormick et al.
patent: 4200892 (1980-04-01), Weimer
patent: 4322638 (1982-03-01), Lee et al.
Weimer-Self Scanned Image Sensory Based on Charge Transfer by the Bucket Brigade Method-IEEE Trans Electron Devices, vol. Ed. 18, No. 11, Nov. 1971, pp. 996-1003.

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