Coherent light generators – Particular active media – Semiconductor
Patent
1997-04-10
1999-11-30
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
257 94, 257 96, 257 97, H01S 319
Patent
active
059955295
ABSTRACT:
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.
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Allerman Andrew A.
Biefeld Robert M.
Kurtz Steven R.
Davie James W.
Hohimer John P.
Sandia Corporation
Stahl Michael J.
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