Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1991-09-05
1993-01-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257101, 257102, H01L 3300
Patent
active
051810840
ABSTRACT:
The invention relates to a semiconductor arrangement used in particular for the manufacture of infrared-emitting diodes. A first Si-doped GaAlAs layer containing an n-conductivity zone and a p-conductivity zone is deposited onto an n-doped GaAs semiconductor substrate. The Al content decreases continuously over the thickness of the layer. A second GaAlAs layer is deposited on the p-conductivity first zone of the first GaAlAs layer. The Al concentration of the second layer at the barrier surface with the first layer is greater than the Al concentration of the first GaAlAs layer at the barrier surface with the substrate and decreases continuously with the thickness of the second layer. The curve of the Al concentrations in the two epitaxial layers permits a light guiding effect so that the emitted radiation can, unlike conventional GaAlAs diodes, be output preferably onto those sides of the semiconductor array oriented vertically or perpendicularly to the substrate. With this measure, the semiconductor substrate does not have to be removed for the manufacture of infrared-emitting diodes.
REFERENCES:
patent: 4438446 (1984-03-01), Tsang
patent: 4942439 (1990-07-01), Schairer
patent: 5060028 (1991-10-01), Kuo et al.
Dawson, "High-Efficiency Graded-Band-Gap Ga.sub.1-x Al.sub.x As Light-Emitting Diodes," Journal of Applied Physics, vol. 48, No. 6, Jun. 1977, pp. 2485-2492.
Gillessen et al., Light Emitting Diodes: An Introduction, Prentice/Hall International, N.J., USA, 1987, pp. 117-125.
Ettenberg et al., "The Reliability of (AlGa)As CW Laser Diodes," IEEE Journal of Quantum Electronics, vol. QE-16, No. 2, Feb. 1980, pp. 186-196.
Leibenzeder et al., "Leistungs-Infrarotdiode aus Gallium-Aluminium-Arsenid," Siemens Forsch.-u. Entwickl-Ber., vol. 9, No. 6, 1980, pp. 339-346.
Bommer Ulrich
Schairer Werner
Mintel William
Telefunken electronic GmbH
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