1990-02-23
1991-07-23
James, Andrew J.
357 4, 357 16, 357 22, 357 58, H01L 2714, H01L 2712, H01L 27161
Patent
active
050347942
ABSTRACT:
An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 microns in wavelength. The pin structure comprises a multi-quantum well structure as an intrinsic layer including a plurality of Al.sub.y Ga.sub.1-y As quantum well layers sandwiched by respective Al.sub.x Ga.sub.1-x As quantum barrier layers (x>y) and a p type Al.sub.x Ga.sub.1-x As layer and an n type Al.sub.x Ga.sub.1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.
REFERENCES:
patent: 4782223 (1988-11-01), Suzuki
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4922218 (1990-05-01), Watanabe et al.
Levine et al., "New 10 .mu.m . . . GaAlAs Superlattices", Appl. Phys. Lett. 50(16), Apr. 1987, pp. 1092-1094.
Levine et al., "High-detectivity . . . Infrared Detector", Appl. Phys. Lett. 53(4), Jul. 1988, pp. 296-298.
Levine et al., "InGaAs/InAlAs . . . 4.4 .mu.m", Appl. Phys. Lett. 52(18), May 1988, pp. 1481-1483.
James Andrew J.
Mitsbuishi Denki Kabushiki Kaisha
Ngo Ngan V.
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