Infrared imager

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

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250211J, H01J 4014

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active

046863737

ABSTRACT:
An infrared imager, wherein an array of detection devices is formed in a thin layer of HgCdTe, which is bonded to a silicon substrate containing a corresponding array of averaging capacitors with addressing and output connections, and via holes through (or bump bonding pads on) the HgCdTe are used to connect each detection device to its corresponding averaging capacitor. The signal from each detection device is repeatedly averaged into its averaging capacitor, so that the output of each pixel site is sensed as an average over a number of read cycles which provides a greatly improved signal-to-noise ratio.

REFERENCES:
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patent: 4360732 (1982-11-01), Chapman et al.
patent: 4388532 (1983-06-01), Garcia
patent: 4395736 (1983-07-01), Fraleux
patent: 4518863 (1985-05-01), Fukuoka et al.
Chapman et al., "Hg.sub.0.7 Cd.sub.03 Te Charge-Coupled Device Shift Register", Apr. 1, 1978, Applied Physics Letter, 32(17), pp. 434-436.
Chapman et al., "Increased Charged Capacity in Breakdown-Limited Metal-Insulated Semiconductor Hg.sub.1-x Cdx, Te Devices Using a Ramped Gate Voltage", Aug. 15, 1980, Applied Physics Letter, 37(4), pp. 419-421.

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