Infrared hot-electron transistor

Details Infrared hot-electron transistor Infrared hot-electron transistor

1990-08-13

1991-07-09

Jackson, Jr., Jerome

357 4, 357 16, 357 34, H01L 29205, H01L 3106

Patent

active

050310135

ABSTRACT:
An infrared hot-electron transistor comprising a doped multiple quantum well structure as an infrared radiation sensitive unit, and an electron energy filter as a dark current reduction unit. Infrared radiation incident on the device gives rise to intersubband absorption. After having absorbed an infrared photon, each photoelectron is one photon energy higher in energy than that of the dark electron, and hence can be separated by an electron energy filter. The transistor consists of three terminals, each of them has an indispensable function. The emitter supplies electrons, the collector collects photoelectrons, and the base provides drainage to the unwanted dark electrons.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4873555 (1989-10-01), Coon et al.
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4903101 (1990-02-01), Maserjian
Choi et al, Appl. Phys. Lett. (50) (25), Jun. 22, 87, pp. 814-816, "Multi Quantum Well . . . Responsivity".
Levine et al, Appl. Phys. Lett., vol. 56, No. 9, Feb. 26, 90, pp. 851-853, "High Sensitivity in Photodetectors".
Reed et al, Appl. Phys. Lett., 54(11), Mar. 13, 89, pp. 1034-1036, "Realization . . . Tunneling Transistor".

Affiliated with

Also associated with

Rating

Infrared hot-electron transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Infrared hot-electron transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared hot-electron transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-621874