Infrared epitaxial detector structure and method of making same

Details Infrared epitaxial detector structure and method of making same Infrared epitaxial detector structure and method of making same

1985-10-03

1987-08-25

James, Andrew J.

357 16, 357 61, H01L 2714, H01L 3100

Patent

active

046896503

ABSTRACT:
Successive layers of a II-VI ternary buffer layer and a II-VI ternary nar-bandpass infrared-absorbing layer are grown by MBE on a III-V binary substrate with low surface defect density. The composition of the buffer layer is chosen to lattice match with the infrared-absorbing layer.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 4369372 (1983-01-01), Yoshioka et al.
patent: 4553152 (1985-11-01), Nishitani
Levinstein, "Infrared Detectors", Physics Today, Nov. 1977, pp. 23-28.

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