Electric resistance heating devices – Heating devices – Continuous flow type fluid heater
Patent
1994-11-28
1997-04-29
Bovernick, Rodney B.
Electric resistance heating devices
Heating devices
Continuous flow type fluid heater
257 22, 257103, H01S 319
Patent
active
056256353
ABSTRACT:
An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.
REFERENCES:
patent: 4184171 (1980-01-01), Panish
patent: 4207122 (1980-06-01), Goodman
patent: 4918496 (1990-04-01), Matsushima
patent: 5251225 (1993-10-01), Eglash
Agrawal and Dutta, Semiconductor Lasers Second Edition, Van Nostrand Reinhold, New York, pp. 455-456 1993.
Agrawal and Dutta, Semiconductor Lasers Second Edition, Van Nostrand Reinhold, New York, pp. 450-454 1993.
Agrawal and Dutta, Semiconductor Lasers Second Edition, Van Nostrand Reinhold, New York, pp. 462-467 1993.
R. M. Biefeld, S. R. Kurtz, L. R. Dawson, and G. C. Osbourn, "The Preparation and Infrared Properties of In(AsSb) Strained-Layer Superlattices," Crystal Properties & Preparation, vol. 21, pp. 141-164, 1989 (no month available).
R. M. Biefeld, K. C. Baucom, S. R. Kurtz, and D. M. Follstaedt, "The Growth of InP.sub.1-x Sb.sub.x by Metalorganic Chemical Vapor Deposition," Journal of Crystal Growth, vol. 133, pp. 38-46, 1993 (no month available).
R. M. Biefeld, K. C. Baucom, S. R. Kurtz, and D. M. Follstaedt, "The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition," Materials Research Society Symposium Proceedings, vol. 325, pp. 493-498, 1994 (no month available).
S. R. Kurtz, R. M. Biefeld, L. R. Dawson, K. C. Baucom, and A. J. Howard, "Midwave (4 .mu.m) Infrared Lasers and Light-Emitting Diodes with Biaxially Compressed InAsSb Active Regions," Applied Physics Letters, vol. 64, pp. 812-814, 14 Feb. 1994.
S. R. Kurtz, R. M. Biefeld, and L. R. Dawson, "Modification of Valence-Band Symmetry and Auger-1 Threshold Energy in Biaxially Compressed InAsSb," Physical Review B, to be published (no date available).
N. K. Dutta, "Calculation of Auger Rates in a Quantum Well Structure and Its Application to InGaAsP Quantum Well Lasers," Journal of Applied Physics, vol. 54, pp. 1236-1245, Mar. 1983.
J. P. van der Ziel, T. H. Chiu, and W. T. Tsang, "Optically Pumped Laser Oscillation at 3.9.mu.m from Al.sub.0.5 Ga.sub.0.5 Sb/InAs.sub.0.91 Sb.sub.0.09 /Al.sub.0.5 Ga.sub.0.5 Sb Double Heterostructures Grown by Molecular Beam Epitaxy on GaSb," Applied Physics Letters, vol. 48, pp. 315-317, 3 Feb. 1986.
A. R. Adams, "Band-Structure Engineering for Low-Threshold High-Efficiency Semiconductor Lasers," Electronics Letters, vol. 22, pp. 249-250, 27 Feb. 1986.
E. Yablonovitch and E. O. Kane, "Band Structure Engineering of Semiconductor Lasers for Optical Communications," IEEE Journal of Lightwave Technology, vol. 6, pp. 1292-1299, Aug., 1988.
H. Mani and A. Joullie, "Some Characteristics of 3.2.mu.m Injection Lasers Based on InAsSb/InAsSbP System," SPIE Proceedings: Physical Concepts of Materials for Novel Optoelectronic Device Applications [SPIE, Bellingham, WA], vol. 1362, pp. 38-48, 1990 (no month available).
R. J. Menna, D. R. Capewell, R. U. Martinelli, P. K. York, and R. E. Enstrom, "3.06.mu.m InGaAsSb/InPSb Diode Lasers Grown by Organometallic Vapor-Phase Epitaxy," Applied Physics Letters, vol. 59, pp. 2127-2129, 21 Oct. 1991.
H. K. Choi and S. J. Eglash, "High-Power Multiple-Quantum-Well GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.1 .mu.m with Low Threshold Current Density," Applied Physics Letters, vol. 61, pp. 1154-1156, 7 Sep. 1992.
W. Dobbelaere, J. DeBoeck, C. Bruynseraede, R. Mertens, and G.Borghs, "InAsSb Light Emitting Diodes and Their Applications to Infra-Red Gas Sensors," Electronics Letters, vol. 29, pp. 890-891, 13 May 1993.
H. Q. Le, G. W. Turner, S. J. Eglash, H. K. Choi, and D. A. Coppeta, "High-Power Diode-Laser-Pumped InAsSb/GaSb and GaInAsSb/GaSb Lasers Emitting from 3 to 4 .mu.m," Applied Physics Letters, vol. 64, pp. 152-154, 10 Jan. 1994.
S. J. Eglash and H. K. Choi, "InAsSb/AlAsSb Double-Heterostructure Diode Lasers Emitting at 4 .mu.m," Applied Physics Letters, vol. 64, pp. 833-835, 14 Feb. 1994.
H. K. Choi, S. J. Eglash, and G. W. Turner, "Double-Heterostructure Diode Lasers Emitting at 3 .mu.m with a Metastable GaInAsSb Active Layer and AlGaAsSb Cladding Layers," Applied Physics Letters, vol. 64, pp. 2472-2476, 9 May 1994.
Z. L. Liau and H. K. Choi, "InAs.sub.1-x Sb.sub.x / In.sub.1-y Ga.sub.y As Multiple-Quantum-Well Heterostructure Design for Improved 4-5 .mu.m Lasers," Applied Physics Letters, vol. 64, pp. 3219-3221, 13 Jun. 1994.
H. K. Choi, G. W. Turner, and Z. L. Liau, "3.9-.mu.m InAsSb/AlAsSb Double-Heterostructure Diode Lasers with High Output Power and Improved Temperature Characteristics," Applied Physics Letters, vol. 65, pp. 2251-2253, 31 Oct. 1994.
Baucom Kevin C.
Biefeld Robert M.
Dawson L. Ralph
Howard Arnold J.
Kurtz Steven R.
Bovernick Rodney B.
Hohimer John P.
Sandia Corporation
Song Yisun
LandOfFree
Infrared emitting device and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infrared emitting device and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared emitting device and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-712070