Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-06-03
2010-12-14
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S732000, C257S786000
Reexamination Certificate
active
07851903
ABSTRACT:
An infrared detector comprises: first and second container members bonded to each other along an annular bonding portion to define a vacuum-sealed inner space, where the second container member has an infrared-transmissive property; an infrared detecting element disposed in the inner space; a first annular metallization layer formed on the bonding portion of the first container member; a second annular metallization layer formed on the bonding portion of the second container member; a solder metal for air-tightly bonding the first metallization layer and the second metallization layer; and a third metallization layer formed in a vicinity of one of the first and second metallization layers such that the third metallization layer overlaps the other of the first and second metallization layers at least partly.
REFERENCES:
patent: 51-15973 (1976-02-01), None
patent: 2002-246492 (2002-08-01), None
patent: 2003-139616 (2003-05-01), None
English Language Abstract, Publication No. JP2003139616; May 14, 2003, 1 p.
English Language Abstract, Publication No. JP 51-15973, Feb. 7, 1976; 2 pp.
English Language Abstract, Publication No. JP 2002-246492, Aug. 30, 2002, 1 p.
Chambliss Alonzo
Haynes and Boone LLP
Showa Optronics Co., Ltd.
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