Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-12-16
1999-10-19
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257188, 257189, 257441, 257 13, 257 14, H01L 310328
Patent
active
059693754
ABSTRACT:
A detector with quantum structure comprising a small-gap semiconductor material inserted between two large-gap semiconductor materials, the structure comprising a coupling grating between the wave to be detected and the detector zone constituted by the small-gap material. Under these conditions, the detector zone may have a very small thickness (typically of the order of 1,000 .ANG.) and lead to a detectivity, limited by the dark current, that is high.
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Berger Vincent
Kaplan Daniel
Micheron Fran.cedilla.ois
Rosencher Emmanuel
Vinter Borge
"Thomson-CSF"
Bui Huy
Hardy David B.
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