Infrared detector packaged with improved antireflection element

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Reexamination Certificate

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06838306

ABSTRACT:
An infrared detector has a window in a cover having a cavity for exposing detector pixels to incident radiation. The window has an antireflective element formed within the cavity as a field of posts. The field of post structures is formed in a cavity by etching the posts in a desired pattern first, and forming the cavity by a general etch over the whole field afterward.

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Kwa, T. A., et al., “Integrated Grating/Detector Array Fabricated in Silicon Using Micromachining Techniques”,Sensors and Actuators A, 31, (1992),256-266.
Motamedi, M. E., et al., “Antireflection surfaces in silicon using binary optics technology”,Applied Optics, 31(22), (Aug. 1992),pp. 4371-4376.

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