Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-06-16
1997-02-11
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257443, 257452, 257459, H01L 3100
Patent
active
056024142
ABSTRACT:
In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.
REFERENCES:
patent: 4646120 (1987-02-01), Halskaylo
patent: 5115295 (1992-05-01), Hisa
Hayafuji Norio
Katoh Manabu
Kawazu Zenpei
Kizuki Hirotaka
Mitsui Kotaro
Kelley Nathan K.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid D.
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