Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-08-23
1996-07-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257 19, 257 22, 257201, H01L 2906, H01L 310328, H01L 310336
Patent
active
055369480
ABSTRACT:
A substrate upon which infrared elements are formed has a crystalline base layer, preferably comprised of silicon; a first strain superlattice layer formed upon the base layer; and a first matched superlattice layer formed upon the strain superlattice layer. The strain superlattice layer and the matched superlattice layer mitigate defect propagation from the base layer to the infrared detector elements. Optionally, a plurality of additional or second strain and matched superlattice layers are formed in an alternating layer configuration upon the first matched superlattice layer so as to achieve enhanced defect filtering.
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Grumman Aerospace Corporation
Mintel William
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