Infrared detector composed of group III-V nitrides

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S370080, C250S370140, C257S021000, C257S022000, C977S759000, C977S816000, C977S954000

Reexamination Certificate

active

10996766

ABSTRACT:
A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and a second conductive layer. Substrate is composed of a monocrystal which may be removed after fabrication. Remaining layers are composed of group III-V nitrides, including binary, ternary, and quaternary compositions. Alternate embodiments of the present invention include a doped binary alloy along first and second conductive layers, a binary alloy along buffer and blocking layers, and alternating alloys of binary, ternary and quaternary compositions within the multiple quantum well. The present invention responds to infrared light at normal and oblique incidences, from near infrared to very far infrared.

REFERENCES:
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4903101 (1990-02-01), Maserjian
patent: 5077593 (1991-12-01), Sato et al.
patent: 5198682 (1993-03-01), Wu et al.
patent: 5384469 (1995-01-01), Choi
patent: 5481397 (1996-01-01), Burt
patent: 5895930 (1999-04-01), Oh et al.
patent: 6211529 (2001-04-01), Gunapala et al.
patent: 6239449 (2001-05-01), Fafard et al.
patent: 6495852 (2002-12-01), Mouri
patent: 6559471 (2003-05-01), Finder et al.
patent: 6593589 (2003-07-01), Osinski et al.
patent: 6605485 (2003-08-01), Razeghi
patent: 6734452 (2004-05-01), Gunapala et al.
patent: 6864552 (2005-03-01), Razeghi
patent: 6946683 (2005-09-01), Sano et al.
patent: 7026641 (2006-04-01), Mohseni et al.
patent: 2004/0135222 (2004-07-01), Alfano et al.
patent: 540235 (1993-05-01), None
Gunapala et al. “Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays”, Semiconductors and Semimetals Series, vol. 62 (1999), pp. 1-10 and 47-54 [online], [retrieved on Jun. 21, 2006]. Retrieved from the Internet <URL:http://qwip.jpl.nasa.gov/rev.pdf>.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Infrared detector composed of group III-V nitrides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Infrared detector composed of group III-V nitrides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infrared detector composed of group III-V nitrides will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3846600

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.