Infrared detector and method of making same

Details Infrared detector and method of making same Infrared detector and method of making same

1982-04-19

1984-04-03

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 148 15, 357 30, 357 71, H01L 3118

Patent

active

044399120

ABSTRACT:
A mercury-cadmium-telluride (HgCdTe) epitaxial detector array is formed on a cadmium telluride (CdTe) substrate. Connecting leads to the detectors are a molybdenum layer covered by a gold-germanium layer. These leads have excellent matches for the thermal coefficients of expansion of the HgCdTe and CdTe and provide ohmic contacts such that the D* of the array is greater than that of arrays made by prior processes using known lead materials, and the noise level is reduced by a factor of approximately three.

REFERENCES:
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patent: 4096510 (1978-06-01), Arai et al.
patent: 4142925 (1979-03-01), King et al.
patent: 4197551 (1980-04-01), Adlerstein
patent: 4301591 (1981-11-01), Withers
patent: 4316201 (1982-02-01), Christou et al.
patent: 4318217 (1982-03-01), Jenner et al.
patent: 4354198 (1982-10-01), Hodgson et al.
Mizuishi et al., "Degradation Mechanism of GaAs MESFET's", IEEE Trans. El Dev., vol. 26, #7, Jul. 1979, pp. 1008-1014.

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