Infrared detector and infrared solid-state imaging device

Details Infrared detector and infrared solid-state imaging device Infrared detector and infrared solid-state imaging device

2011-03-22

2011-03-22

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S021000, C257S117000, C257S118000, C257S432000, C257S461000, C257SE31054, C250S332000, C250S338100, C250S338400, C250S341400

Reexamination Certificate

active

07911015

ABSTRACT:
An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

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