Infrared detection device comprising a pyroelctric thin film and

Coating processes – Electrical product produced – Photoelectric

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427 79, 427100, 4271263, 427379, B05D 512

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058915125

ABSTRACT:
A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

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patent: 5130542 (1992-07-01), Sibbald et al.
patent: 5435889 (1995-07-01), Dietrich
Great Britain Search Report; Application No. GB 9507900.0; Dated Jul. 14, 1995.
Ferroelectrics vol. 104 1990 (UK) ; R.W. Whatmore et al. "Ferroelectric Materials for IR Sensors State-of-the-Art and Perspectives", pp. 269-283.
J. Chen et al., "Rapid thermal annealing of sol-gel derived lead zirconate titanate thin films", J. Appl. Phys. 71(9), May 1, 1992, pp. 4465-4469.
N. Tohge et al., "Preparation of PbZrO.sub.3 0PbTiO.sub.3 Ferroelectric Thin Films by the Sol-Gel Process", J. Am. Ceram. Soc. 74(1), Jan. 1991, pp. 67-71.
R. Takayama et al., National Technical Report vol. 39 No. 4, Aug. 1993, pp. 122-130.

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