Infrared detecting element, method of manufacturing the same...

Details Infrared detecting element, method of manufacturing the same... Infrared detecting element, method of manufacturing the same...

2005-06-21

2005-06-21

Hannaher, Constantine (Department: 2878)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C250S338100

Reexamination Certificate

active

06909093

ABSTRACT:
To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting element1using a silicon nitride film as a first structure layer22constituting a structure of a membrane portion4is provided. Unlike silicon oxide, the first structure layer22has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1and D2can be formed in a silicon substrate2by using the first structure layer22as an element isolation region, and thus deformation of a thermopile12due to a change in the environment can be prevented to suppress measurement error of the thermopile12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1and D2can be provided.

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Sensor Device Structure of Thermopile Sensor Technology, Jul. 1986 (vol. 6, No. 8), author not identified by applicant pp 66-68.

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