Infrared detecting element

Details Infrared detecting element Infrared detecting element

1989-03-22

1990-11-20

James, Andrew J.

357 4, 357 16, 357 24, 357 90, H01L 2712

Patent

active

049722450

ABSTRACT:
An intermediate layer made of an Si.sub.1-X Ge.sub.X mixed crystal layer is formed on an Si crystal substrate, where the character X denotes a value in the range of 0 to 1. The intermediate layer is connected to the substrate via a heterojunction generating a first heterojunction barrier. An Si crystal layer is formed on the intermediate layer and is connected to the intermediate layer via a heterojunction generating a second heterojunction barrier. The substrate, the intermediate layer, and the Si layer form a laminated structure. The first and second heterojunction barriers form a charge storage well in an energy band of the intermediate layer. Charges in the well are excited by absorbing infrared light. The intermediate layer contains unevenly-distributed impurities whose concentration montonically varies in a direction along a thickness of the laminated structure. The variation in the concentration generates an internal electric field in the energy band of the intermediate layer. The internal electric field increases a probability of movement of the excited charges from the well into one of the substrate and the Si layer.

REFERENCES:
patent: 4316103 (1982-02-01), Nathanson
patent: 4514748 (1985-04-01), Bean
patent: 4725870 (1988-02-01), Bean
"3p-N-9"; lecture in the thirty-third spring meeting of Applied Physical Society of Japan in 1986.
"Impurity Germanium and Silicon Infrared Detectors" by P. R. Bratt; Chapter 2 published from Academic Press in 1977, pp. 39-142.

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