Infrared and blue stacked laser diode array by wafer fusion

Details Infrared and blue stacked laser diode array by wafer fusion Infrared and blue stacked laser diode array by wafer fusion

1998-01-07

2000-08-15

Sanghavi, Hemang

Coherent light generators

Particular active media

Semiconductor

372 43, 372 68, 372 97, H01S 314

Patent

active

061047406

ABSTRACT:
An an infrared laser structure has an inverted or p-side down orientation. The infrared laser structure is inverted and wafer fused to a blue laser structure to form an infrared/blue monolithic laser structure. The top semiconductor layer of the inverted infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

REFERENCES:
R. K. Sink et al., "Cleaved GaN facets by wafer fusion of GaN to InP", Applied Physics Letters, vol. 68, No. 15, Apr. 8, 1996, pp. 2147 to 2149.
R. J. Ram et al., "GaAs to InP wafer fusion", Journal of Applied Physics, vol. 78, No. 6, Sep. 15, 1995, pp. 4227 to 4237.
Y. H. Lo, "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement", Applied Physics Letters, vol. 62, No. 10, Mar. 8, 1993, pp. 1038 to 1040.

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