Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1978-12-01
1980-06-10
Rutledge, L. Dewayne
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
29569L, 148171, 148175, 148 335, 331 945H, 357 16, 357 18, 357 30, 357 61, H01L 2714, H01L 29205, H01L 21208
Patent
active
042071224
ABSTRACT:
In (Sb.sub.0.1 As.sub.0.9) light emissive diodes and lasers are grown on Ga Sb substrates to give lattice matching. Ga Sb has higher band gap, high refractive index therefore gives electrical, but not optical, confinement required for laser action. Both confinement types provided by sandwiching active layer between layers of (Al.sub.0.6 Ga.sub.0.4) Sb. In (Sb.sub.0.1 As.sub.0.9) emits at approximately 4 .mu.m, but emission can be shifted by increasing the proportion of In Sb and restoring the lattice match by the addition of another compound semiconductor e.g. Ga As for longer wavelength emission or In P or Al As for shorter wavelength emission.
REFERENCES:
patent: 3614549 (1971-10-01), Lorenz et al.
patent: 3696262 (1972-10-01), Antypas
patent: 3814993 (1974-06-01), Kennedy
patent: 3932883 (1976-01-01), Rowland et al.
patent: 3982261 (1976-09-01), Antypas
patent: 3983509 (1976-09-01), Scifres et al.
patent: 3995303 (1976-11-01), Nahory et al.
patent: 4015284 (1977-03-01), Hara et al.
patent: 4032951 (1977-06-01), De Winter et al.
patent: 4034311 (1977-07-01), Itoh et al.
patent: 4075654 (1978-02-01), Hara et al.
Tietjen et al., "Vapor Phase Growth . . . III-V . . . Semiconductors", R.C.A. Review, Dec. 1970, pp. 635-646.
International Standard Electric Corporation
O'Halloran John T.
Rutledge L. Dewayne
Saba W. G.
Van Der Sluys Peter C.
LandOfFree
Infra-red light emissive devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Infra-red light emissive devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Infra-red light emissive devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-861202