Information storage apparatus using semiconductor probe

Details Information storage apparatus using semiconductor probe Information storage apparatus using semiconductor probe

2005-02-15

2005-02-15

Lee, Michael G. (Department: 2876)

Registers

Coded record sensors

Particular sensor structure

C235S492000, C257S295000

Reexamination Certificate

active

06854648

ABSTRACT:
An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.

REFERENCES:
patent: 5985404 (1999-11-01), Yano et al.
patent: 6477132 (2002-11-01), Azuma et al.
patent: A-6-243518 (1994-09-01), None
patent: A-10-2001-19871 (2001-03-01), None

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