Inelastic tunnel diodes

Details Inelastic tunnel diodes Inelastic tunnel diodes

1983-04-19

1984-11-13

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 12, 357 30, H01L 3106

Patent

active

044827792

ABSTRACT:
Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to mid-ultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into a metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

REFERENCES:
patent: 3475609 (1969-10-01), Schneider
patent: 4081289 (1978-03-01), Campbell
patent: 4179702 (1979-12-01), Lamorte
patent: 4206002 (1980-06-01), Sabnis et al.
patent: 4219830 (1980-08-01), Gibbons
patent: 4251679 (1981-02-01), Zwan
patent: 4377722 (1983-03-01), Wested
G. Cheek et al., "MIS and SIS Silicon Solar Cells: A Review", Proceedings, 3rd. E. C. Photovoltaic Solar Energy Conf., (1980), Reidel Pub. Co., (1981), pp. 353-357.
R. Singh et al., "Tunnel MIS Solar Cells", J. Vac. Sci. Technol., vol. 14, pp. 89-91, (1977).

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