Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S277000, C257SE21022
Reexamination Certificate
active
07968968
ABSTRACT:
An inductor utilizing a pad metal layer. The inductor comprises a metal spiral, a metal bridge, and a metal interconnect. The metal bridge is formed with the pad metal layer and a plurality of vias and has one end connected to the metal spiral. The metal interconnect is connected to the other end of the metal bridge. In addition, resistivity of the pad metal layer is lower than that of the metal spiral.
REFERENCES:
patent: 5969405 (1999-10-01), Aeugle
patent: 6356183 (2002-03-01), Jou
patent: 6420773 (2002-07-01), Liou
patent: 2001/0028098 (2001-10-01), Liou
patent: 2005/0275497 (2005-12-01), Ramadan et al.
patent: 2006/0022287 (2006-02-01), Itoi et al.
patent: 2006/0170072 (2006-08-01), Nakashiba
Chao Chih-Ping
Su Chia-Yu
Wang Sung-Hsiung
Birch & Stewart Kolasch & Birch, LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Tan N
LandOfFree
Inductor utilizing pad metal layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Inductor utilizing pad metal layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inductor utilizing pad metal layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2659412