Inductor formed on semiconductor substrate

Details Inductor formed on semiconductor substrate Inductor formed on semiconductor substrate

2011-05-24

2011-05-24

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C336S200000, C336S232000

Reexamination Certificate

active

07948055

ABSTRACT:
An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.

REFERENCES:
patent: 4816784 (1989-03-01), Rabjohn
patent: 5963831 (1999-10-01), Fu
patent: 5966063 (1999-10-01), Sato et al.
patent: 6429504 (2002-08-01), Beaussart et al.
patent: 6796017 (2004-09-01), Harding
patent: 2001/0040270 (2001-11-01), Kobayashi
patent: 2000021635 (2000-01-01), None
Article Titled “Design of Multiple-Metal Stacked Inductors Incorporating an Extended Physical Model” jointly authored by Murphy et al., IEEE Transactions on Microwave Theory and Techniques, vol. 53, No. 6, Jun. 2005, pp. 2063-2072).

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