Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2000-03-03
2001-07-17
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S281000, C257S379000, C257S401000
Reexamination Certificate
active
06262468
ABSTRACT:
RELATED APPLICATIONS
The following applications have been filed and may contain similar material as the present application, U.S. Ser. Nos. 08/363,145 and 08/355,750.
FIELD OF INVENTION
The invention relates to semiconductor devices and more particularly to an inductor formed in at least partially in a substrate of a semiconductor device.
BACKGROUND OF THE INVENTION
Transformers amplify and attenuate fluctuating voltages. A transformer is formed with at least two inductors, a primary and a secondary, lying in close proximity (magnetically coupled) to each other. Each inductor consists of a core and a coil wound around the core. When a fluctuating voltage is applied to the coil of the primary inductor, magnetic lines of flux are created in the core of the primary inductor. The magnetic lines of flux permeate the core of the secondary inductor. The changing values of the magnetic lines of flux in the secondary inductor create a time varying current in the secondary coil and hence an induced emf (electromotive force). The induced emf in the secondary coil is directly proportional to the emf in the primary coil and the ratio of the number of turns of the secondary coil to the number of turns of the primary coil.
Typically, inductors have been large and heavy since they were made using a ferromagnetic core to enhance magnetic flux. Recently, inductors have been manufactured on a semiconductor wafer. One such inductor is described in U.S. Pat. No. 3,614,554.
SUMMARY OF THE INVENTION
The invention includes an inductor partially formed in the silicon in a silicon on insulator (SOI) structure or in another type of substrate of a semiconductor structure. The inductor of the invention is formed using a plurality of serially connected transistors having a common gate. The active area of the substrate used to form each transistor functions as the inductor coil, and the gate functions as the inductor core. Preferably, the gate is connected to the DC supply potential, Vcc.
In one application the invention includes a transformer comprised of two inductors of the invention. The transformer of the invention provides voltage control in order to increase or decrease an external supply potential, Vcc. The number of turns of the primary and secondary coils of the transformer, and thus the turns ratio of the transformer, is controllable by the number of transistors used in fabricating the primary and secondary inductors of the transformer.
In one currently envisioned embodiment a control transistor is serially connected to an external supply node and the primary coil of the transformer. The external supply node is connectable to Vcc. The control transistor is actuated intermittently by an output of a ring oscillator thereby creating a pulsating current in the primary coil. The pulsating current in the primary coil creates a changing magnetic flux in the primary core which permeates the secondary core thereby producing a corresponding pulsating current in the secondary coil. The pulsating current in the secondary coil is converted to obtain a DC potential.
REFERENCES:
patent: 3614554 (1971-10-01), Shield
patent: 4024565 (1977-05-01), Anthony et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5767563 (1998-06-01), Imam et al.
Imam Mohamed A.
Yoganathan Sittampalam
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Wojciechowicz Edward
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