Inductor formed at least partially in a substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257281, 257379, 257401, H01L 2972

Patent

active

060547502

ABSTRACT:
A method of making an inductor and the inductor. The inductor comprises a plurality of serially connected transistors at least partially formed in a substrate, preferably a silicon on insulator substrate, and comprises a gate common to the plurality of transistors. The plurality of transistors, transistor contacts, and electrical interconnects form the coil of the inductor and the gate common to the plurality of transistors forms the core of the inductor. Two inductors of the invention are magnetically coupled to form a transformer of the invention. A control transistor is serially connected to the primary inductor of the transformer. The control transistor is gated by a periodic output signal of a ring oscillator. An actuation and a deactuation of the control transistor allows the current in the primary coil to vary creating a changing magnetic flux in the primary and secondary cores and inducing a fluctuating current in the secondary coil.

REFERENCES:
patent: 3614554 (1971-10-01), Shield
patent: 4024565 (1977-05-01), Anthony et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5767563 (1998-06-01), Imam et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Inductor formed at least partially in a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Inductor formed at least partially in a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inductor formed at least partially in a substrate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-995369

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.