Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-12-19
1996-09-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257773, 257728, 257698, 336 65, 336200, 336220, H01L 2900, H01F 2706, H01F 2728, H01F 500
Patent
active
055593607
ABSTRACT:
An inductor fabricated for semiconductor use is disclosed. The inductor is formed with a multi-level, multi-element conductor metallization structure which effectively increases conductance throughout the inductor thereby increasing the inductor's Q. The structure of the inductor may also provide for routing the current flowing through the multi-level, multi-element conductors in a way that increases the self inductance between certain conductive elements, thereby increasing the inductor's total inductance.
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J. Y. C. Chang and Michael Gaitan, "Large Suspended Inductors on Silicon and Their Use in a 2-.mu.m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 14. No. 5, May 1993 pp. 246-248.
K. B. Ashby, W. C. Finley, J. J. Bastek, S. Moinian and I. A. Koullians, "High Q Inductors For Wireless Application In a Complementary Silicon Bipolar Process", 1994 Bipolar/BiCMOS Circuits & Technology Meeting pp., 179-182.
Chiu Tzu-Yin
Erceg Frank M.
Jeon Duk Y.
Sung Janmye
Crane Sara W.
Lucent Technologies - Inc.
Tang Alice W.
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