Inductor devices using substrate biasing technique

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257528, H01L 2900

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active

059527048

ABSTRACT:
Inductors used for impedance matching in the radio frequency integrated circuits is disclosed. In the integrated inductor device according to the present invention, an additional electrode is arranged in surroundings of an inductor metal line, and the reverse bias voltage is applied to the region between the substrate and the electrode so as to form a depletion layer. Therefore, the substrate biasing is effected and thus an inductor having improved performance can be formed by decreasing the parasitic capacitance between the inductor metal line and the substrate. The present invention can also be applied to another semiconductor device having metal lines and pads.

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Burghartz, J.N., High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier, IEDM, pp. 1015-1017, 1995.
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Arnold, R.G., et al. Microwave characterization of microstrip lines and spiral inductors in MCM-D technology, IEEE, Dec., 1992.

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