Inductively coupled discharge for plasma etching and resist stri

Details Inductively coupled discharge for plasma etching and resist stri Inductively coupled discharge for plasma etching and resist stri

1981-09-01

1984-02-14

Paschall, M. H.

Electric heating

Metal heating

By arc

219121PD, 219121PF, 156646, 204164, B23K 900, B01K 100

Patent

active

044318987

ABSTRACT:
Apparatus for plasma etching of semiconductor devices. A plasma chamber is inductively coupled to a source of A.C. power wherein the semiconductor devices are etched. Alternately, the semiconductor devices may be etched or stripped at a location downstream of the plasma chamber.

REFERENCES:
patent: 3187152 (1965-06-01), Itoya
patent: 3432296 (1969-03-01), McKinnon et al.
patent: 3586905 (1971-06-01), Bignell
patent: 4065369 (1977-12-01), Ogawa et al.
patent: 4123663 (1978-10-01), Horiike
patent: 4361749 (1982-11-01), Lord
IBM, vol. 21, No. 12, May 1979, "High Rate Triode Plasma Etching of Si".
"Glow Discharge Phenomena in Plasma Etching and Plasma Deposition", vol. 26, #2, pp. 319-324, Solid State Science & Technology, 2/1979.
"Triode System for Plasma Etching", IBM, vol. 21, #12, 5/1979.

Affiliated with

Also associated with

Rating

Inductively coupled discharge for plasma etching and resist stri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Inductively coupled discharge for plasma etching and resist stri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inductively coupled discharge for plasma etching and resist stri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2376726