Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1997-08-14
1999-04-06
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257500, 257546, 257547, 257550, 257552, 257553, 327110, H01L 7900
Patent
active
058922687
ABSTRACT:
A semiconductor device includes a power transistor group and a signal circuit on the same substrate. The substrate is grounded at an isolation region at an end of the substrate adjacent to the power transistor group so that the grounded portion of the substrate is distant from the signal circuit.
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patent: 5545917 (1996-08-01), Peppiette et al.
patent: 5753964 (1998-05-01), Yashita et al.
Kawakita Keisuke
Miyake Hideki
Yashita Takahiro
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
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