Induction plasma source

Details Induction plasma source Induction plasma source

1992-11-04

1994-09-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 118723JR, 31511151, 20429834, 20419232, H01L 2100

Patent

active

053465784

ABSTRACT:
An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.

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