Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-04-06
1995-03-07
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257528, 257773, H01L 2702
Patent
active
053961013
ABSTRACT:
An inductance element for use in a microwave integrated circuit for processing high-frequency signals ranging from hundreds of MHz to tens of GHz. A conductor wiring in the form of a thin film is formed by sputtering or the like on a semi-insulating compound semiconductor substrate of GaAs for instance. This conductor wiring is about 2-20 .mu.m wide. The intersection between a lead wire from the inner end of the conductor wiring and a spiral coil are insulated by means of an air bridge and the like to form a spiral inductor. A core portion made of high permeability magnetic material is provided in the central portion of the spiral inductor and may be divided into a grid of many small square insulated members. The core portion is directly formed on the substrate by, for instance, sputtering high permeability magnetic material such as nickel. With such an inductance element, the same inductance can be obtained as before but with a miniaturized element.
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Carroll J.
Sumitomo Electric Industries Ltd.
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