Inductance element

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257528, 257773, H01L 2702

Patent

active

053961013

ABSTRACT:
An inductance element for use in a microwave integrated circuit for processing high-frequency signals ranging from hundreds of MHz to tens of GHz. A conductor wiring in the form of a thin film is formed by sputtering or the like on a semi-insulating compound semiconductor substrate of GaAs for instance. This conductor wiring is about 2-20 .mu.m wide. The intersection between a lead wire from the inner end of the conductor wiring and a spiral coil are insulated by means of an air bridge and the like to form a spiral inductor. A core portion made of high permeability magnetic material is provided in the central portion of the spiral inductor and may be divided into a grid of many small square insulated members. The core portion is directly formed on the substrate by, for instance, sputtering high permeability magnetic material such as nickel. With such an inductance element, the same inductance can be obtained as before but with a miniaturized element.

REFERENCES:
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patent: 4494100 (1985-01-01), Stengel et al.
patent: 4689594 (1987-08-01), Kawabata et al.
patent: 4710478 (1987-12-01), Yoder et al.
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5227659 (1993-07-01), Hubbard

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