Induced junction solar cell and method of fabrication

Details Induced junction solar cell and method of fabrication Induced junction solar cell and method of fabrication

1976-06-15

1978-05-16

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 52, 357 91, 148 15, H01L 2714

Patent

active

040902137

ABSTRACT:
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n.sup.+ stripes and thermally growing a thin SiO.sub.2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO.sub.2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide, to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

REFERENCES:
patent: 3564355 (1971-02-01), Lehovec
patent: 3601668 (1971-08-01), Slaten
patent: 3657614 (1972-04-01), Crichi
patent: 3888698 (1975-06-01), Lindmayer
patent: 3911465 (1975-10-01), Foss
patent: 3922774 (1975-12-01), Lindmayer

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