Induced junction chalcopyrite solar cell

Details Induced junction chalcopyrite solar cell Induced junction chalcopyrite solar cell

1991-02-25

1992-06-30

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 136265, 357 12, 357 30, H01L 3106, H01L 31032

Patent

active

051259842

ABSTRACT:
A new solar cell of a I-III-VI.sub.2 semiconductor material that has an inversion layer is provided. The cell comprises a substrate having an electrically conductive, first electrode, a p-conductive, polycrystalline semiconductor layer of chalcopyrite material, a barrier layer composed of an electrically non-conductive material, a second electrode, and an antireflection layer. The anti-reflection layer has stationary, positive charges that induce a negatively charged inversion layer in the boundary surface region of the semiconductor layer relative to the barrier layer. The negatively charged inversion layer serves as an emitter for a space charge zone. In an embodiment the invention comprises a semiconductor layer of copper-indium-diselenide or copper-gallium-diselenide, a barrier layer of silicon dioxide, an anti-reflection layer of silicon nitride, and cesium chloride as the stationary charges.

REFERENCES:
patent: 4253881 (1981-03-01), Hezel
patent: 4891325 (1990-01-01), Hezel et al.
R. Hezel et al, Conference Record, 20th IEEE Photovoltaic Specialists Conference (1988), pp. 1560-1564.
Mitchell et al., "Single and Tandem Junction CuInSe.sub.2 Cell and module Technology", Conference Record, 20th IEEE Photovoltaic Specialists Conference, pp. 1384-1389 (1988).
Hezel, "Statusreport 1990", Photovoltaik, pp. 2-4 (May 1990).

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