Individually biased transistor high frequency switch

Details Individually biased transistor high frequency switch Individually biased transistor high frequency switch

2006-04-18

2006-04-18

Feild, Lynn (Department: 2835)

Electrical transmission or interconnection systems

Switching systems

Condition responsive

C307S139000

Reexamination Certificate

active

07030515

ABSTRACT:
A single-pole multiple-throw RF switch includes first and second FET arrangements, each having a gate and a controlled current path (CCP). One end of the CCP of each FET is connected to a common port by way of an arrangement which blocks DC flow between the FETs, but allows RF flow. Bias is applied to the gates of the FETs to enable RF flow through the CCP of a selected one and not through the others. One version uses a single bias source and cross-coupled resistors, and another version uses plural bias sources switched to the various FETs.

REFERENCES:
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patent: 6426525 (2002-07-01), Brindle
patent: 6690250 (2004-02-01), M.o slashed.ller
patent: 2004/0235549 (2004-11-01), Struble et al.

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