Indium tin oxide (ITO) layer forming

Details Indium tin oxide (ITO) layer forming Indium tin oxide (ITO) layer forming

2008-08-08

2011-11-01

Healy, Brian (Department: 2883)

Liquid crystal cells, elements and systems

Nominal manufacturing methods or post manufacturing...

C428S201000, C428S697000, C428S426000, C428S210000, C427S419200, C427S255230, C118S696000

Reexamination Certificate

active

08049862

ABSTRACT:
A layer of material, such as crystalline indium tin oxide (ITO), is formed on top of a substrate by heating the material to a high temperature, while a temperature increase of the substrate is limited such that the temperature of the substrate does not exceed a predetermined temperature. For example, a layer including amorphous ITO can be deposited on top of the substrate, and the amorphous layer can be heated in a surface anneal process using radiation while limiting substrate temperature. Another process can pass electrical current through the amorphous ITO. In another process, the substrate is passed through a high-temperature deposition chamber quickly, such that a portion of a layer of crystalline ITO is deposited, while the temperature increase of the substrate is limited.

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