Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Intervalley transfer
Patent
1991-05-24
1994-05-10
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Intervalley transfer
257655, 257615, H01L 4702
Patent
active
053110340
ABSTRACT:
A Gunn diode in which the conversion efficiency can be improved without lowering the reliability, by reducing the dead zone while maintaining n.sup.+ nn.sup.+ structure. In this Gunn diode, the donor impurity concentration in the n-type active layer is graded along a direction perpendicular to a contact plane between the n-type active layer and the n.sup.+ -type layers, and an average concentration gradient of the donor impurity concentration in the n-type active layer simultaneously satisfies the following two inequalities: G>(A.sub.1 N/L)exp(-NL/S.sub.1) and G<(A.sub.2 N/L)exp(-NL/S.sub.2), where L is a thickness of the n-type active layer, N is an average concentration of the donor impurity, S.sub.1 =0.87.times.10.sup.12 cm.sup.-2 is a constant, S.sub.2 =1.32.times.10.sup.12 cm.sup.-2 is a constant, A.sub.1 =2.0 is a constant, and A.sub.2 =9.0 is a constant.
REFERENCES:
H. Kurita et al., "W-Band InP Gunn Diodes with Optimized Linearly Graded Doping Profiles", Apr. 1991, Conference Digest, p. 81.
John Ondria and Raymond L. Ross, "Enhanced Ted MMW Device Performance Using Graded Doping Profiles", Sep. 1987, 17th European Microwave Conference, pp. 673-680.
A. Yokohata et al., "Millimeter-Wave InP Gunn diodes with Linearly Graded Profiles Grown by Low Pressure MOCVD", Sep. 18-21, 1990, The 3rd Asia-Pacific Microwave Conference Proceedings, pp. 1135-1138.
John Ondria and Raymond L. Ross, "Improved Performance of Fundamental and Second Harmonic MMW Oscillators Through Active Doping Concentration Contouring", 1987, IEEE MTT-S Digest, pp. 977-980.
J. M. Szubert et al., "W-Band GaAs Gunn Diodes with High Output Power", Sep. 1990, Solid-State Electronics, vol. 33, No. 8, pp. 1035-1037.
H. Kurita et al., "W-Band InP Gunn Diodes with Optimized Linearly Graded Doping Profiles", Apr. 1991, Conference Digest, p. 81.
John Ondria and Raymond L. Ross, "Enhanced Ted MMW Device Performance Using Graded Doping Profiles", Sep. 1987, 17th European Microwave Conference, pp. 673-680.
A. Yokohata et al., "Millimeter-Wave InP Gunn Diodes with Linearly Graded Profiles Grown by Low Pressure MOCVD", Sep. 18-21, 1990, The 3rd Asia-Pacific Microwave Conference Proceedings, pp. 1135-1138.
John Ondria and Raymond L. Ross, "Improved Performance of Fundamental and Second Harmonic MMW Oscillators Through Active Device Doping Concentration Contouring", 1987, IEEE MTT-S Digest, pp. 977-980.
J. M. Szubert et al., "W-Band GaAs Gunn Diodes with High Output Power", Sep. 1990, Solid-State Electronics, vol. 33, No. 8, pp. 1035-1037.
S. M. Sze, "Physics of Semiconductor Devices, Second Edition", 1981, pp. 646 and 649.
F. B. Frank et al., "High Efficiency Millimetre Wave Oscillators and Amplifiers", Electronic Engineering, Jun. 1985, pp. 39-42.
Kodama Atsushi
Kurita Hiroshi
Suga Kazuhiko
Yokohata Akihito
Larkins William D.
Nippon Mining Co., Ltd.
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