Indium phosphide arsenide based devices

Details Indium phosphide arsenide based devices Indium phosphide arsenide based devices

1980-05-01

1981-09-22

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136252, 136262, 250211J, 250212, 357 65, 357 67, H01L 3100, H01L 3106

Patent

active

042913233

ABSTRACT:
Devices based on InAs.sub.1-x P.sub.x where 0.85.ltoreq.x<1 show advantageous properties. An exemplary device is a rectifying diode formed from indium tin oxide deposited on the subject InAs.sub.1-x P.sub.x.

REFERENCES:
patent: 4121238 (1978-10-01), Bachmann et al.
J. J. Tietjen et al., "The Preparation & Properties of Vapor Deposited Epitaxial InAs.sub.1-x P.sub.x Using Arsine & Phosphorous;" J. Electrochem. Soc., vol. 116, pp. 492-494 (1967).
H. A. Allen et al., "Deposition of Epitaxial InAs.sub.x P.sub.1-x on GaAs & GaP Substrates", J. Electrochem. Soc., vol. 17, pp. 1081-1082 (1970).
H. A. Allen, "The Orientation Dependence of Epitaxial InAs.sub.x P.sub.1-x on GaAs", J. Electrochem. Soc., vol. 117, pp. 1417-1419 (1970).
p-InP
-CdS Solar Cells & Photovoltaic Detectors", Appl. Phys. Lett., vol. 26, pp. 229-230 (1975).

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