Indium gallium nitride light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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257 94, 257101, H01L 3300

Patent

active

060780649

ABSTRACT:
A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable to a blue light emitting diode, where InGaN is used as the light emitting layer.

REFERENCES:
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5684523 (1997-11-01), Satoh et al.
patent: 5789265 (1998-08-01), Nitta et al.
patent: 5798537 (1998-08-01), Nitta
patent: 5880486 (1999-03-01), Nakamura et al.
patent: 5923690 (1999-07-01), Kume et al.

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