Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-05-04
2000-06-20
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257101, H01L 3300
Patent
active
060780649
ABSTRACT:
A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable to a blue light emitting diode, where InGaN is used as the light emitting layer.
REFERENCES:
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5684523 (1997-11-01), Satoh et al.
patent: 5789265 (1998-08-01), Nitta et al.
patent: 5798537 (1998-08-01), Nitta
patent: 5880486 (1999-03-01), Nakamura et al.
patent: 5923690 (1999-07-01), Kume et al.
Biing-Jye Lee
Chia-Cheng Liu
Chuan-Ming Chang
Ming-Jiunn Jou
Tarn Jacob C.
Chaudhuri Olik
Epistar Co.
Lin, Patent Agent Hung C.
Wille Douglas A.
LandOfFree
Indium gallium nitride light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Indium gallium nitride light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Indium gallium nitride light emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855313