Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2011-05-17
2011-05-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S076000, C257S189000, C257S615000, C257SE21085, C257SE33001
Reexamination Certificate
active
07943924
ABSTRACT:
Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
REFERENCES:
patent: 6078064 (2000-06-01), Ming-Jiunn et al.
patent: 6740906 (2004-05-01), Slater, Jr. et al.
patent: 6791119 (2004-09-01), Slater, Jr. et al.
patent: 6794684 (2004-09-01), Slater, Jr. et al.
patent: 6888167 (2005-05-01), Slater, Jr. et al.
patent: 7067340 (2006-06-01), Tsai et al.
patent: 7087931 (2006-08-01), Wu et al.
patent: 7132695 (2006-11-01), Ou et al.
patent: 7183586 (2007-02-01), Ichihara et al.
patent: 7211833 (2007-05-01), Slater, Jr
patent: 7274040 (2007-09-01), Sun
patent: 2005/0173725 (2005-08-01), Kunisato et al.
patent: 2005/0184300 (2005-08-01), Tazima et al.
patent: 2006/0049417 (2006-03-01), Li et al.
patent: 2008/0283854 (2008-11-01), Iza et al.
Jang et al. “Low-resistance and thermally stable indium tin oxide Ohmic contacts on strainedp-In0.15Ga0.85N/p-GaN layer”Journal of Applied Physics101(1):013711-1-013711-4 (2007).
Han et al. “The Effect of p-In-GaN layer on ITO based ohmic contacts to p-GaN”, International Nano-Optoelectronics Workshop, 2007, i-NOW '07, Jul. 29, 2007-Aug. 11, 2007, pp. 90-91.
Bergmann Michael John
Driscoll Daniel Carleton
Emerson David Todd
Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Pert Evan
Wilson Scott
LandOfFree
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