Indium gallium aluminum phosphide silicon doped to prevent zinc

Details Indium gallium aluminum phosphide silicon doped to prevent zinc Indium gallium aluminum phosphide silicon doped to prevent zinc

1992-06-26

1994-01-11

Larkins, William D.

Coherent light generators

Particular active media

Semiconductor

257 13, 257 22, 257 97, 257102, H01S 319, H01L 3300

Patent

active

052788571

ABSTRACT:
In a semiconductor light-emitting element having a double hetero junction structure of an InGaAP system an n-type dopant, which does not change a crystal structure, is doped in an In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P(0.ltoreq.x<1, y.perspectiveto.0.5) active layer, so that an n-type active layer (4), is formed between a p-type InGaAlP cladding layer (5), which has band-gap energy that is larger than that of the active layer (4), and an n-type InGaAlP cladding layer (3), thereby preventing the dopant of the P-type InGaAlP cladding layer (3) from being dispersed into the active layer (4). Thus, the oscillation wavelength of the light-emitting element is not shifted to a short wavelength, and the threshold current of the oscillation is not increased thereby providing an element which can improve yield and reliance.

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K. Kobayashi, et al., "661.7 nm Room-Temperature CW Operation of AlGaInP Double Heterostructure Lasers With Aluminum-Containing Quaternary Active Layer," Electronics Letters, vol. 22, No. 24, Nov. 21, 1985, pp. 1162-1163.
S. Kawata, et al., "621 nm CW Operation (0.degree. C.) of AlGaInP Visible Semiconductor Lasers," Electronics Letters, vol. 22, No. 23, Nov. 6, 1986, pp. 1265-1266.
M. Watanabe, et al., "Optical Tristability Using a Twin-Stripe Laser Diode," Applied Physics Letters, vol. 50, No. 8, Feb. 23, 1987, pp. 427-429.
K. Kobayashi, et al., "AlGaInP Double Heterostructure Visible-Light Laser Diodes with a GaInP Active Layer Grown by Metalorganic Vapor Phase Epitaxy", IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 704-711.

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