Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S007000, C257S086000, C257S103000, C257S214000, C257S298000, C257S432000, C257S436000, C257S444000, C257S461000, C438S095000, C438S096000, C438S389000
Reexamination Certificate
active
06900468
ABSTRACT:
Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.
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Chalken Alison
Gibson Gary
Lee Heon
Nauka Krysztof
Yang Chung-Ching
Hewlett--Packard Development Company, L.P.
Louie Wai-Sing
Pham Hoai
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