Indium arsenide magnetoresistor

Details Indium arsenide magnetoresistor Indium arsenide magnetoresistor

1989-10-25

1990-05-15

Reynolds, Bruce A.

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

H01L 4300

Patent

active

049261541

ABSTRACT:
A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

REFERENCES:
patent: 4251795 (1981-02-01), Shibasaki et al.
patent: 4401966 (1983-08-01), Ohmura et al.
patent: 4568905 (1986-02-01), Suzuki et al.
S. Kataoka, "Recent Development of Magnetoresistive Devices and Applications", Circulars of the Electrotechnical Laboratory No. 182, Agency of Industrial Science and Technology, Tokyo (Dec. 1974).
H. H. Wieder, "Transport Coefficients of Indium Arsenide Epilayers,"Applied Physics Letters, vol. 25, No. 4, pp. 206-208 (Aug. 15, 1974).
G. Burns, Solid State Physics Sections 18-5 and 18-6, pp. 726-747, Academic Press, Inc., Harcourt Brace Jovanovich, Publishers, New York, 1985.
H. P. Baltes and R. S. Popovic, "Integrated Semiconductor Magnetic Field Sensors", Proceedings of the IEEE, vol. 74, No. 8, pp. 1107-1132 (Aug. 1986).
S. Kalem, J.-I. Chyi and H. Morkoc, "Growth and Transport Properties of InAs epi-Layers on GaAS," Applied Physics Letters, vol. 53, No. 17, pp. 1647-1649 (Oct. 24, 1988).

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