Indium-antimony complex crystal semiconductor and process for pr

Details Indium-antimony complex crystal semiconductor and process for pr Indium-antimony complex crystal semiconductor and process for pr

1982-03-25

1984-08-28

Rosenberg, Peter D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

420555, 420572, B05D 512

Patent

active

044684150

ABSTRACT:
An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

REFERENCES:
patent: 3634143 (1972-01-01), Brennan
patent: 3850685 (1974-11-01), Sakai
patent: 4213781 (1980-07-01), Noreika

Affiliated with

Also associated with

Rating

Indium-antimony complex crystal semiconductor and process for pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Indium-antimony complex crystal semiconductor and process for pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Indium-antimony complex crystal semiconductor and process for pr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-877375